FDG6316P
Manufacturer:
On Semiconductor
Mfr.Part #:
FDG6316P
Datasheet:
Description:
MOSFETs SOT-363 SMD/SMT P-Channel number of channels:2 300 mW -12 V Continuous Drain Current (ID):-700 mA 2.4 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -12 V |
| Length | 2 mm |
| Width | 1.25 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 270 mΩ |
| Height | 1 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 2 |
| Current Rating | -700 mA |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 300 mW |
| Power Dissipation | 300 mW |
| Threshold Voltage | -600 mV |
| Number of Channels | 2 |
| Input capacitance | 146 pF |
| Continuous Drain Current (ID) | -700 mA |
| Rds On Max | 270 mΩ |
| Drain to Source Voltage (Vdss) | -12 V |
| Turn-On Delay Time | 5 ns |
| Turn-Off Delay Time | 8 ns |
| Element Configuration | Dual |
| Fall Time | 13 ns |
| Rise Time | 13 ns |
| Gate Charge | 2.4 nC |
| Drain to Source Resistance | 221 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | -12 V |
| Schedule B | 8541210080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 1.5 V |
| FET Type(Transistor Polarity) | P-Channel |
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